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硅基二氧化硅阵列波导光栅是集成化波分复用光网络中的核心器件之一。对其制作工艺的研究对提高器件的性能具有重大意义。提出一种在波导上包层使用硼锗共掺高温退火的工艺方法,成功实现阵列波导间空隙的填充,并将阵列波导光栅的插入损耗成功降低约2 dB。相对于传统的硼磷硅玻璃工艺,此方法避免了剧毒气体磷烷的使用,工艺简便安全,同时降低了成本。最后,通过对光刻、增强型等离子体化学气相沉积法(PECVD)薄膜沉积、感应耦合等离子体(ICP)干法刻蚀和高温退火回流等工艺步骤的改进、完善和优化,实现了额外损耗约为1.5 dB的阵列波导光栅。
Silicon-based silicon dioxide array waveguide grating is one of the core devices in an integrated wavelength division multiplexed optical network. The study of its production process is of great significance to improve the performance of the device. A process of boron-germanium codoped high-temperature annealing on the waveguide was proposed. The gap between the arrayed waveguides was successfully filled and the insertion loss of the arrayed waveguide grating was reduced by about 2 dB. Compared with the traditional borophosphosilicate glass process, this method avoids the use of the poisonous gas phosphine, the process is simple and safe, and the cost is reduced at the same time. Finally, through the improvement, optimization and optimization of photolithography, PECVD film deposition, inductively coupled plasma (ICP) dry etching and high-temperature annealing backflow, additional losses are realized An arrayed waveguide grating of about 1.5 dB.