对GaAs基808 nm半导体激光器进行恒流老化试验,并利用电学法观察退化过程中激光器有源区温度变化和热阻,发现有源区温度随老化时间明显上升,而热阻没有明显变化,同时测试了老化过程中激光器的电学和光学特性,经分析,激光器失效的主要原因是有源区载流子非辐射复合增加,引起激光器有源区温度上升,从而说明电学法热特性测试是检测激光器退化的有效方法之一,为进一步提高激光器的热管理技术和改善其热特性奠定了一定的基础。 The GaAs-based 808 nm semiconductor laser was subjected to a constant current aging test. The temperature and active resistance of the laser active region during degradation were observed by electrical method. It was found that the temperature of the active region increased significantly with the aging time, while the thermal resistance did not change significantly. The electrical and optical characteristics of the laser in the aging process were tested. The main reason for the failure of the laser was the non-radiative recombination of carriers in the active region, which caused the temperature rise in the active region of the laser. Degradation is one of the effective methods, which lays a solid foundation for further improving the thermal management technology of laser and improving its thermal characteristics.