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对栅氧化后３０ｋｅＶ与４３ｋｅＶＦ离子注入的Ｐ沟ＭＯＳＦＥＴ进行了电离辐射响应特性的比较．结果发现，３０ｋｅＶ注Ｆ具有较强的抑制辐射感生氧化物电荷和界面态增长的能力．用３０ｋｅＶ注Ｆ具有较少注入缺陷的模型对实验结果进行了讨论．
A comparison of the ionizing radiation responses of P-channel MOSFETs with 30 keV and 43 keVF ion implanted after gate oxidation was performed. The results showed that 30 keV injection F has a strong ability to inhibit radiation-induced oxide charge and interface state growth. Experimental results were discussed with a 30 keV injection model with fewer implant defects.