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为了制备单晶Ni衬底,将大约100nm厚的牺牲外延铜层电沉积在单晶镍基极层上,然后再沉积一个10 ̄50μm的外延镍层,利用选择性的腐蚀去
In order to prepare a single crystal Ni substrate, a sacrificial epitaxial copper layer of about 100 nm in thickness is electrodeposited on a single crystal nickel base layer and then a 10-50 m epitaxial nickel layer is deposited by selective etching