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DaimlarChryslerResearchCenterandUmiversityofUlm首先报道了在GaAs衬底上生长应变In 0 52Ga 0 4 8AsPIN二极管 ,并可用作开关MMIC。由于其底的开启电压和低的开启电阻 ,InP基InGaAsPIN二极管
DaimlarChryslerResearchCenterandUniversityofUlm first reported the growth of strain In 0 52Ga 0 48AsPIN diodes on GaAs substrates and can be used as a switching MMIC. InP-based InGaAsPIN diodes due to its bottom turn-on voltage and low turn-on resistance