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用磁控射频溅射法制备了ＮｉＦｅ／Ｃｕ／Ｃｏ多层膜；研究了薄膜的磁特性和磁电阻特性与中间层Ｃｕ厚度的关系．在适当的Ｃｕ层厚度下（大约为２ｎｍ），制备出了具有很好自旋阀巨磁阻效应的多层膜．研究表明，在弱磁场下，薄膜的磁电阻回线的斜率与原来的磁化过程有关，因此该薄膜材料可以用于巨磁电阻存储器中
The NiFe / Cu / Co multilayer films were prepared by magnetron RF sputtering. The relationship between the magnetic properties and the magnetoresistance properties of the films and the Cu thickness of the interlayer was investigated. At appropriate Cu layer thickness (about 2 nm), a multi-layer film with good GMR effect of spin-valve was fabricated. The research shows that under the weak magnetic field, the slope of the magnetoresistive loop of the film is related to the original magnetization process. Therefore, the thin film material can be used in the giant magnetoresistive memory