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本文利用ＰｔＳｉ／ｎ－Ｓｉ接触试制成一种新的肖特基势垒二极管，其反向击穿电压一般在１５Ｖ以上，最高达到３５Ｖ。测试了它的Ｉ－Ｖ特性，并与理论计算结果进行了比较和分析。
In this paper, a new Schottky barrier diode is fabricated by PtSi / n-Si contact test. Its reverse breakdown voltage is generally above 15V and up to 35V. Its I-V characteristics were tested and compared with the theoretical calculation results.