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对强流离子注入,为了产生预防晶片充电所需要的低能电子,普遍采用以固体靶或气体靶中发射二次电子的馈送枪技术。由于它在实用上有重要的意义,虽然对电子能量范围的控制和电子传输到晶片仍存在很大的困难,但电子馈送枪的性能却得到了稳定的提高。最近,在等离子体桥联技术基础上已研究出一种新的电荷中和技术。在等离子体桥联技术中,一个低压等离子体发生器给离子束提供了丰富的电子发生源,且对电子的能量分布能够有效的控制。使用这种设计,电荷中和作用得到很大的提高。本文阐述了该设计的基本结构及使用等离子体馈送枪时使注入的合格率改善情况。
For strong ion implantation, in order to generate the low-energy electrons needed to prevent wafer charging, feed gun technology that emits secondary electrons in a solid target or gas target is commonly used. Because of its practical importance, the performance of the electron-feed gun has been steadily improved, although the control of the electron energy range and the transmission of electrons to the wafer are still very difficult. Recently, a new charge neutralization technique has been developed based on the plasma bridge technology. In plasma bridging, a low-pressure plasma generator provides a rich source of electron generation for the ion beam and provides effective control over the electron’s energy distribution. With this design, the charge neutralization is greatly enhanced. This article describes the basic structure of the design and the improvement of pass rates for injection when using a plasma feed gun.