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碲锡铅大单晶是这样制备的:先将一定量的碲、锡、铅(必要时加一定量的铋)混合,然后将混合物放在950℃温度中反应,形成“源材料”。再将源材料在850～860℃的恒温区中重结晶并转变成单晶,以防止材料转移而造成组分不均匀。此后,将这些晶体(铋掺杂的、布里奇曼法或引上法生长的)切成薄片,然后放在由富金属碲锡铅粉末制得的富金属蒸汽压中于600～650℃下等温退火。把退火温度降到200℃左右再进一步退火,可把p型晶体变成n型。退火后,不论p型、n型或本征型都变成了低载流子浓度,高迁移率的晶体。
Tellurium-tin single crystals are prepared by first mixing a certain amount of tellurium, tin, lead (if necessary with a certain amount of bismuth) and reacting the mixture at a temperature of 950 ° C to form a “source material.” The source material is recrystallized in a constant temperature region of 850 ° C to 860 ° C and converted into a single crystal to prevent the material from being transferred to cause uneven composition. Thereafter, these crystals (bismuth-doped, Bridgman’s or paraffin-grown) were sliced and then placed in a metal-rich vapor pressure made of metal-rich tellurium-tin-lead powder at 600 to 650 ° C Isothermal annealing. The annealing temperature dropped to about 200 ℃ and then further annealed, the p-type crystals can become n-type. After annealing, regardless of p-type, n-type or intrinsic type has become a low carrier concentration, high mobility of the crystal.