平面晶体管(一维门)在通道上的多晶硅,是以一维方向分布在通道周围的,可以将此想象为简单的平面电容器。而在三维门中,通道升高了,在通道周围的三个方向上都有门,所以得名为三维门。这就是两种门技术工作原理的区别,10月23日英特尔工程学院院士 Shekhar Y.Borkar 在回答我的第一个问题时出示了上面二张图。 The planar transistors (one-dimensional gates) of polysilicon in the channel are distributed around the channel in a one-dimensional direction, which can be thought of as a simple planar capacitor. In the three-dimensional door, the channel is raised, and there are doors in all three directions around the channel, so it is called a three-dimensional door. This is the difference between the two gate technologies. On October 23, Shekhar Y. Borkar, an academician of Intel Engineering, presented the above two pictures in response to my first question.