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研究分子束外延 (MBE)生长的应变In0 .2 Ga0 .8As GaAs折射率梯度变化异质结单量子阱激光二极管的快速热处理 (RTA)效应 .结果表明 ,RTA移除了InGaAs GaAs界面非辐射中心 ,提高 77K光致发光效率和有源层电子发射 .同时Al和Ga原子互扩散 ,也增加了AlGaAs波导层DX中心浓度 .RTA处理后样品电流冲击老化实验证明DX中心浓度呈现出相应的增加 .这表明DX中心可能是激光二极管性能退化的原因之一 .
(RTA) effect of heterojunction single quantum well laser diode with gradient In0 .2 Ga0 .8As GaAs refractive index growth was investigated. The results show that RTA removes the non-radiative center of InGaAs GaAs interface , Increasing the photoluminescence efficiency of 77K and the electron emission of the active layer, meanwhile, the interdiffusion of Al and Ga atoms also increased the concentration of DX center in AlGaAs waveguide layer.After the RTA treatment, the current impact aging experiment showed that the concentration of DX center showed a corresponding increase. This shows that the DX center may be one of the causes of laser diode degradation.