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研究了可取代多晶硅扩散掺杂的离子注入掺杂工艺,通过两种掺杂方式对CCD栅介质损伤、多晶硅接触电阻及均匀性等关键参数影响的对比研究,发现离子注入掺杂制作的多晶硅栅质量优于扩散掺杂制作的多晶硅栅,这有利于CCD输出均匀性的提高。对两种多晶硅掺杂方式的工艺集成条件进行对比,多晶硅掺杂采用离子注入方式其工艺步骤更简单,工艺集成度更高。
The ion implantation doping process, which can replace polysilicon diffusion doping, is studied. By comparing the influence of two doping methods on the key parameters such as dielectric damage of CCD gate, contact resistance and evenness of polycrystalline silicon, it is found that the polysilicon gate made by ion implantation doping The quality is better than that of the polysilicon gate fabricated by diffusion and doping, which is beneficial to the improvement of CCD output uniformity. The two kinds of polycrystalline silicon doping process integration process conditions are compared, polycrystalline silicon doping using ion implantation process steps more simple, higher process integration.