研究了在 Co/Ti/Si结构中加入非晶 Ge Si层对 Co Si2 /Si异质固相外延的影响 ,用离子束溅射方法在Si衬底上制备 Co/Ge Si/Ti/Si结构多层薄膜 ,通过快速热退火使多层薄膜发生固相反应。采用四探针电阻仪、AES、XRD、RBS等方法进行测试。实验表明 ,利用 Co/Ge Si/Ti/Si固相反应形成的 Co Si2 薄膜具有良好的外延特性和电学特性 ,Ti中间层和非晶 Ge Si中间层具有促进和改善 Co Si2 外延质量 ,减少衬底耗硅量的作用。Ge原子的存在能够改善外延 Co Si2 薄膜的晶格失配率 The effect of adding amorphous Ge Si layer on the Co Si2 / Si heterojunctional solid phase epitaxy was investigated in the Co / Ti / Si structure. The Co / Ge Si / Ti / Si structure was prepared on the Si substrate by ion beam sputtering Multi-layer thin film, through rapid thermal annealing of the multilayer film solid-phase reaction. Using four probe resistance meter, AES, XRD, RBS and other methods for testing. The experimental results show that the Co Si2 thin films formed by the solid state reaction of Co / Ge Si / Ti / Si have good epitaxial and electrical properties. The Ti intermediate layer and the amorphous Ge Si interlayer can promote and improve the Co Si2 epitaxial quality, Silicon consumption at the end of the role. The presence of Ge atoms can improve the lattice mismatch rate of epitaxial Co Si2 thin films