我们用钴-60源放射的γ射线辐照硅衬底上热生长的二氧化硅。运用电子自旋共振法,在室温下,我们观测到三种辐射诱生顺磁缺陷中心。一种共振现象显然是由于Si和SiO_2界面处和其它三个硅原子键连的三价硅引起的。另外两种共振现象非常像早期研究时在辐照过的高纯SiO_2中观测到的共振,这两种共振现象是由联接三个氧原子的三价硅和未形成共价键的氧原子2P轨道上的不成对电子引起的。 We irradiate the thermally grown silica on a silicon substrate with γ-rays emitted by cobalt-60 source. Using electron spin resonance method, we observed three kinds of radiation-induced paramagnetic defects at room temperature. A resonance phenomenon is apparently due to the trivalent silicon bonded to the other three silicon atoms at the Si and SiO 2 interface. The other two resonances are much like the resonances observed in the irradiated high purity SiO 2 in the early studies. These two resonances are caused by the reaction between trivalent silicon, which links three oxygen atoms, and 2P, an oxygen atom that does not form a covalent bond Unpaired electrons in orbit caused by.