利用热生长工艺和热蒸发方法分别获得CuPc和Si O2薄膜层,通过原子力显微镜和X射线光电子能谱对其表面界面电子状态进行了研究,并采用高斯拟合方法对各谱进行了详细分析.结果表明,在氧原子的作用下,N1s ,C1s ,O1s和Cu2p都经受了一定的化学位移,从而使得各原子间的相互作用强度有所改变,这是导致OFET性能劣化的重要原因之一.对OFET而言,采用溅射工艺制备的Si O2层应比热氧化生长的Si O2层更合适. The CuPc and Si O2 thin films were obtained by thermal growth process and thermal evaporation respectively. The surface states of CuPc and Si O2 were studied by atomic force microscopy and X-ray photoelectron spectroscopy. The Gaussian fitting method was used to analyze each spectrum. The results show that under the action of oxygen atoms, N1s, C1s, O1s and Cu2p all undergo a certain chemical shift, so that the intensity of interaction between atoms changes, which is one of the important reasons leading to the performance degradation of OFET. For OFET, the Si O2 layer prepared by the sputtering process should be more suitable than the thermally oxidized Si O2 layer.