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用高分辨率多晶多反射X射线衍射仪进行衍射空间的二维扫描是目前非损伤性表征半导体材料质量的手段之一．不同质量的材料在二维衍射空间中的衍射图形状不同．本文以GaAS／AlGaAs为例，展示了如何利用X射线的二维衍射空间图的形状来定性地分析半导体单晶样品的宏观弯曲、微观倾斜、组分梯度、应变、弛豫以及平行于界面的连续性等问题．所得结果同样适用于其它半导体材料．
The high resolution polycrystalline multi-reflection X-ray diffractometer for the two-dimensional scanning of the diffraction space is one of the means of non-destructive characterization of semiconductor materials. Diffraction patterns of different quality materials in two-dimensional diffraction space are different. Taking GaAs / AlGaAs as an example, this paper shows how to use the shape of the two-dimensional diffraction pattern of X-ray to qualitatively analyze the macro-bending, microscopic inclination, composition gradient, strain, relaxation and parallel to the interface Continuity and other issues. The results also apply to other semiconductor materials.