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功率器件封装失效机理可以根据封装工艺流程分成三个部分,芯片焊接(dieattach)时的焊料缺陷,打线(Wirebond)时的引线缺陷,最后塑封成型(molding)时的分层缺陷。除了采用以上三种分析手段定位和分析封装缺陷外,对于比较复杂的封装缺陷,如因为打线外力对芯片造成的打线损伤(bonding damge),环境或操作不当造成芯片沾污等,还可以利用聚焦离子束(focused ion beam,FIB),能量弥散X射线探测器(energy dis-persive X-ray detector,EDX)等分析手段。FIB可利用离子束去除芯片表面绝缘层或金属层,从而观察引线键合部分下层的芯片损伤。EDX可利用元素分析功能判断是否存在外来污染。
The failure mechanism of the power device package can be divided into three parts according to the packaging process, the solder defects during die bonding, the lead defects during wire bonding, and the delamination defects during the last molding. In addition to using the above three analysis methods to locate and analyze package defects, for more complex package defects, such as bonding damge caused by external force applied to the chip, chip contamination caused by improper environment or operation, etc., Using analytical ion beam (FIB), energy dispersive X-ray detector (EDX) and other analytical tools. FIB can use the ion beam to remove the surface of the chip insulation layer or metal layer, so as to observe the underlying chip bonding wire bonding damage. EDX can use elemental analysis to determine the presence of foreign contamination.