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In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In_(0.24)Ga_(0.76)As_(0.21)Sb_(0.79)bulk materials and InAs/GaSb type-II superlattices with cutoff wavelengths of 2.2μm and 3.6μm,respectively.At 200 K,the short-wave channel exhibits a peak quantum efficiency of 42%and a dark current density of5.93×10~(-5)A/cm~2at 500 mV,thereby providing a detectivity of 1.55×10~(11)cm·Hz~(1/2)/W.The mid-wave channel exhibits a peak quantum efficiency of 31%and a dark current density of 1.22×10~(-3)A/cm~2at-300 mV,thereby resulting in a detectivity of 2.71×10~(10)cm·Hz~(1/2)/W.Moreover,we discuss the band alignment and spectral cross-talk of the dual-band n-i-p-p-i-n structure.
In this paper, we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In_ (0.24) Ga_ (0.76) As_ (0.21) Sb_ (0.79) bulk materials and InAs / GaSb type-II superlattices with cutoff wavelengths of 2.2 μm and 3.6 μm, respectively. At 200 K, the short-wave channel exhibits a peak quantum efficiency of 42% and a dark current density of 5.93 × 10 -5 A / cm 2at 500 mV, thereby providing a detectivity of 1.55 × 10 ~ (11) cm · Hz ~ (1/2) / W. The mid-wave channel exhibits a peak quantum efficiency of 31% and a dark current density of 1.22 × 10 -3 ) A / cm ~ 2at-300 mV, resulting in a detectivity of 2.71 × 10 ~ (10) cm · Hz ~ (1/2) /W.Moreover, we discuss the band alignment and spectral cross-talk of the dual -band nippin structure.