采用脉冲腐蚀方法，研究多孔硅的动态腐蚀过程，测定了动态电流和时间的关系，提出并讨论了动态腐蚀机理．用脉冲腐蚀制备得到发光多孔硅，与直流腐蚀相比较，脉冲腐蚀能得到均匀性更好、发光更强的多孔硅，而且ＰＬ峰位有一定的蓝移，我们认为脉冲腐蚀是一种更优秀的制备方法，并对此作了初步的讨论． Using the pulse erosion method, the dynamic corrosion process of porous silicon was studied, the relationship between dynamic current and time was measured, and the dynamic corrosion mechanism was proposed and discussed. Porous silicon was prepared by pulsed corrosion. Compared with direct current etching, pulsed corrosion can be more uniform and emits more light, and PL peak has a certain blue shift. We think that pulsed corrosion is a better The preparation method, and made a preliminary discussion.