论文部分内容阅读
本文计算了注入条件对GaAsMESFET的影响,并报道了最终可得到的器件性能。将Si、Se和Be离子注入GaAs中,就其分布的大量研究结果引进GaAsMEsFET枝术的综合工艺和器件模型中。研究了注入能量对跨导的影响,注入分布和杂质对低栅偏置跨导的影响和退火期间杂质扩散,包封层厚度和栅槽深度对阈值电压均匀性的影响,以及采用Si_3N_4和SiO_2包封注入,受撞原子对阈值电压的影响。
This article calculates the impact of implant conditions on GaAsMESFETs and reports on the final available device performance. Si, Se and Be are ion-implanted into GaAs, and a large number of studies on their distribution are introduced into the integrated process and device models of GaAsMEsFET devices. The effects of implantation energy on the transconductance, the influence of implantation distribution and impurity on the transconductance of the low gate bias, the influence of impurity diffusion, the thickness of the encapsulation layer and the depth of the gate trench on the threshold voltage uniformity during the annealing process were investigated. The effects of Si 3 N 4 and SiO 2 Implantation, Impact of atom on threshold voltage.