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本文将电化学合成与分子印迹技术相结合,采用循环伏安法在石墨电极表面,形成盐酸环丙沙星(CPX)分子印迹聚吡咯薄膜,制备了CPX分子印迹传感器。实验对传感器的制备条件进行了优化,用铁氰化钾作为活性电子探针,采用方波伏安法研究了传感器性能。结果表明,在1×10~(-8)~1×10~(-4)mol/L范围内,峰电流与CPX浓度负对数呈良好的线性关系,检出限(S/N=3)为3.5×10~(-9)mol/L。传感器对模板分子CPX选择性强,重现性和稳定性好,置于室温下15d峰电流强度无明显变化。
In this paper, CPX molecularly imprinted polypyrrole films were formed by cyclic voltammetry on graphite electrode by electrochemical synthesis and molecular imprinting technique. CPX molecular imprinting sensors were prepared. The experimental conditions for the preparation of the sensor were optimized. Potassium ferricyanide was used as the active electron probe to study the sensor performance by square-wave voltammetry. The results showed that there was a good linear relationship between the peak current and the negative logarithm of CPX concentration in the range of 1 × 10 -8 -8 × 10 -4 mol / L. The detection limit (S / N = 3 ) Is 3.5 × 10 ~ (-9) mol / L. The CPX selectivity, repeatability and stability of the sensor to the template molecule were good, and there was no significant change in peak current intensity after 15 days at room temperature.