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在金属-氧化物-半导体集成电路中,以硅栅代替铝栅的方法具有低阈值电压和自对准结构等优点,为国内外广泛采纳。硅栅MOS集成电路对多晶硅膜的质量究竟有哪些要求,如何达到这些要求,这是人们所关心的。下面仅就我们前段工作中遇到的两个问题,谈点粗浅的看法。
In metal-oxide-semiconductor integrated circuits, silicon gate instead of aluminum gate has the advantages of low threshold voltage and self-aligned structure, widely used at home and abroad. Silicon gate MOS integrated circuits of polysilicon film quality what are the requirements, how to meet these requirements, which is of concern. The following is only a brief summary of the two problems we encountered in the preceding paragraph.