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We studied silicon,carbon,and SiC xnanostructures fabricated using liquid-phase electron-beam-induced deposition technology in transmission electron microscopy systems.Nanodots obtained from fixed electron beam irradiation followed a universal size versus beam dose trend,with precursor concentrations from pure Si Cl4to 0%SiC l4in CH2Cl2,and electron beam intensity ranges of two orders of magnitude,showing good controllability of the deposition.Secondary electrons contributed to the determination of the lateral sizes of the nanostructures,while the primary beam appeared to have an effect in reducing the vertical growth rate.These results can be used to generate donut-shaped nanostructures.Using a scanning electron beam,line structures with both branched and unbranched morphologies were also obtained.The liquid-phase electron-beaminduced deposition technology is shown to be an effective tool for advanced nanostructured material generation.
We studied silicon, carbon, and SiC xnanostructures fabricated using liquid-phase electron-beam-induced deposition technology in transmission electron microscopy systems. Nanodots obtained from fixed electron beam irradiation followed by a universal size versus beam dose trend, with precursor concentrations from pure Si Cl4to 0% SiC l4in CH2Cl2, and electron beam intensity ranges of two orders of magnitude, showing good controllability of the deposition. Secondary ary contributed to the determination of the lateral sizes of the nanostructures, while the primary beam has to have an effect in reducing the vertical growth rate. These results can be used to generate donut-shaped nanostructures. Using a scanning electron beam, line structure with both branched and unbranched morphologies were also obtained. The liquid-phase electron-beaminduced deposition technology is shown to be an effective tool for advanced nanostructured material generation.