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用R1000激光共聚焦Raman光谱仪研究了高温高压合成棒中的立方氮化硼(cBN)晶体、原材料六方氮化硼(hBN)和催化剂。Raman光谱测量结果表明:伴随cBN晶体生长的散射峰,出现了两条全新的Raman散射峰(约1088 cm-1和约1368 cm-1)。该散射峰所对应的物质可能是在高温高压条件下hBN向cBN转变时生成的不完全产物——BN的一种新相。这一结果将有助于进一步讨论cBN的生长机理。
The cubic boron nitride (cBN) crystals, the raw material hexagonal boron nitride (hBN) and the catalyst in the high temperature and high pressure synthesis bar were investigated by R1000 laser confocal Raman spectrometer. The results of Raman spectroscopy show that two new Raman scattering peaks (about 1088 cm-1 and about 1368 cm-1) appear along with the scattering peak of cBN crystal. The corresponding material of the scattering peak may be a new phase of BN, which is an incomplete product generated when hBN is transformed into cBN under high temperature and high pressure. This result will help to further discuss the growth mechanism of cBN.