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本文提出了一个新型的SOI埋层结构SOANN(silicon on aluminum nitride with nothing),用AIN代替传统的SiO2材料,并在SOI埋氧化层中引入空洞散热通道.分析了新结构SOI器件的自加热效应.研究结果表明:用AIN做为SOI埋氧化层的材料,降低了晶格温度,有效抑制了自加热效应.埋氧化层中的空洞,可以进一步提供散热通道,使埋氧化层的介电常数下降,减小了电力线从漏端通过埋氧到源端的耦合,有效抑制了漏致势垒降低DIBL(drain Induced barrier lowering)效应.因此,本文提出的新型SOANN结构可以提高SOI器件的整体性能,具有优良的可靠性.
In this paper, we propose a new type of SON (silicon on aluminum nitride with nothing), in which AIN is used to replace the traditional SiO2 material and a cavity is introduced into the SOI buried oxide layer. The self-heating effect of SOI devices The results show that the use of AIN as the SOI buried oxide layer reduces the lattice temperature and effectively suppresses the self-heating effect.The holes in the buried oxide layer can further provide cooling channels to make the dielectric constant of the buried oxide layer Decreases and reduces the drain-induced barrier lowering (DIBL) effect by reducing the power line coupling from the drain terminal to the source terminal.Therefore, the novel SOANN structure proposed in this paper can improve the overall performance of the SOI device, With excellent reliability.