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研究了ＶＵＶ（真空紫外）光直接光ＣＶＤ（化学汽相淀积）ＳｉＯ２／Ｓｉ界面微结构缺陷与衬底温度（Ｔｓ）的关系。实验结果表明：在３２℃～１８０℃的温度范围内，与Ｓｉ－Ｏ－Ｓｉ伸缩模相对应的ＩＲ峰位随Ｔｓ的降低从１０６０ｃｍ－１增加至１０８０ｃｍ－１。固定氧化物电荷密度（ΔＮｏｔ）在Ｔｓ＞１２０℃后，呈正电性，与位于３．１０ｅＶ的氧空位缺陷相关；在Ｔｓ＜１００℃一侧，呈负电性，与２．８４ｅＶ能级位置的过剩氧缺陷相关；而在１００℃～１２０℃间，ΔＮｏｔ具有极小值，其大小约在１０１０ｃｍ－２数量级。
The relationship between microstructure defects and substrate temperature (Ts) at VUV (vacuum ultraviolet) light direct optical CVD (chemical vapor deposition) interface was investigated. The experimental results show that the IR peak corresponding to Si-O-Si telescopic mode increases from 1060cm-1 to 1080cm-1 with the decrease of Ts within the temperature range of 32 ℃ ~ 180 ℃. The fixed oxide charge density (ΔNot) is positively charged at Ts> 120 ° C, correlates with an oxygen vacancy defect at 3.10 eV, negative at Ts <100 ° C, and negatively charged at 2.84 eV Excess oxygen deficiency related; and in 100 ℃ ~ 120 ℃, ΔNot has a minimum, the size of about 1010cm-2 in the order of magnitude.