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1981年9月20日-23日在日本召开的国际砷化镓和有关化合物学术会议是自1966年以来的第九届国际会议。正式代表394人,论文94篇,最新进展(摘要)14篇。中国代表共11人。 正式会议共三天。最受重视的是 GaAs IC.第一次全体会议有6篇论文是关于 GaAs IC的,另外2篇与IC有关的文章,报告单位包括美国Rockwell和HUGHES,日本NTT、三菱和电子综合技术所,法国 THOMSON-CSF等单位。从报告内容可看出:GaAs IC速度比硅 IC快,集成度已达到 LSI,但器
The International Symposium on Gallium Arsenide and Related Compounds Held in Japan, September 20-23, 1981, is the 9th International Conference since 1966. 394 official delegates, 94 papers, and 14 most recent developments (abstract). A total of 11 Chinese delegates. Formal meeting a total of three days. The most important aspect is the GaAs IC. The first plenary session included six papers on GaAs ICs and two other articles related to ICs. The reporting units included Rockwell and HUGHES in the United States, NTT in Japan, Mitsubishi and Electronics Technology Institute, France THOMSON-CSF and other units. As can be seen from the report: GaAs IC speed faster than silicon IC, LSI has reached integration, but the device