硅片直接键合制作ＳＯＩ结构的工艺研究＝［刊，俄］１９９４，２３（６）．－４６～５４本文研究了硅片热压键合前化学处理原始硅表面对低温下表面半粘附键合质量和ＳＯＩ结构质量的影响。采用二次离子质谱方法分析硅片直接键合形成的ＳＯＩ结构中的杂质分布剖面表明，在... Silicon wafer bonded SOI structure of the process of research = [published, Russia] 1994,23 (6). -46 ~ 54 The effect of chemical treatment of the original silicon surface on the surface semi-adhering bonding quality and the quality of SOI structure at low temperature was investigated in this paper. The secondary ion mass spectrometry method is used to analyze the impurity distribution profile in SOI structure formed by the direct bonding of silicon wafer.