【摘 要】
：
分析了常规AlGaInP系发光二极管(LED)光提取效率低的主要原因,半导体的折射率与空气折射率相差很大,导致全反射使有源区产生的光子绝大部分不能通过出光面发射到体外。通过在
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分析了常规AlGaInP系发光二极管(LED)光提取效率低的主要原因,半导体的折射率与空气折射率相差很大,导致全反射使有源区产生的光子绝大部分不能通过出光面发射到体外。通过在LED出光层采用纳米压印技术引入表面纳米结构,以改变光子的传播路径,从而使得更多的光子能够发射到体外。理论分析与实验结果表明,与常规平面结构相比,纳米结构的引入,器件发光强度平均增加了1倍以上。
The main reason for low light extraction efficiency of conventional AlGaInP system LEDs is analyzed. The refractive index of semiconductors is greatly different from that of air, resulting in the total reflection that most of the photons generated in the active region can not be emitted to the outside through the light-emitting surface . By introducing nanostructures into the LED’s light-emitting layer using nanoimprint technology to change the photon propagation path, allowing more photons to be emitted in vitro. Theoretical analysis and experimental results show that, compared with the conventional planar structure, the introduction of nanostructures, the device luminous intensity increased by an average of more than 1 times.
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