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研究成功用Ⅳ族元素锗进行硅／硅键合的一整套新技术（代替通用的亲水法）；实现了键合层无孔洞， 边沿键合率达９８％ 以上， 键合强度达２１５６ Ｐａ 以上， 并通过在锗中掺入与低阻同型号的杂质， 实现了应力补偿。
A series of new technologies (instead of the common hydrophilic method) for successful Si / Si bonding with Group IV germanium have been studied. The bonding layer has no holes and the edge bonding rate is over 98%. The bonding strength reaches 2156 Pa , And through the incorporation of germanium and low resistance with the same type of impurities, to achieve the stress compensation.