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With the development of high power ultrafast laser passively mode-locked by a semiconductor saturableabsorber mirror (SESAM), the damage threshold and degeneration mechanism of the SESAM become moreand more important. One way to reduce the maximum electric field inside the active part of the SESAMis the use of a dielectric coating on the top of the semiconductor structure. With Fresnel formula, opticaltransfer matrix, and optical thin film theory, the electric field distribution and reflectance spectrum canbe simulated. We introduce the design principles of SESAM including the dependence of reflectance spec-trum on dielectric function of absorber, and investigate the dependences of the electric field distribution,modulation depth, reflectance spectrum, and the relative value of incident light power at the top quantumwell of SESAM on the number of SiO_2/Ta_2O_5 layers.
One way to reduce the maximum electric field inside the active part of the SESAMis the use of a dielectric coating on the top of the semiconductor structure. With Fresnel formula, optical transmissivity matrix, and optical thin film theory, the electric field distribution and reflectance spectrum canbe simulated. We introduce the design principles of SESAM including the dependence of reflectance spec -trum on dielectric function of absorber, and investigate the dependences of the electric field distribution, modulation depth, reflectance spectrum, and the relative value of incident light power at the top quantumwell of SESAM on the number of SiO 2 / Ta 2 O 5 layers.