论文部分内容阅读
意法半导体推出最新的MDmesh Dk5功率MOSFET管,内部增加一个快速恢复二极管的甚高压(VHV)超结晶体管,这样结构有助于设计人员最大限度提升各种功率转换拓扑的能效,包括零压开关(ZVS)LLC谐振转换器。ST推出新款的MDmesh MOSFET,内置快速恢复二极管,提升高能效转换器的功率密度作为超结MOSFET管,新产品额定电压范围950V至1050V,开关性能、导通电阻(RDS(ON))和硅单位面积流过的额定电流等技术参数均优于平面结构
STMicroelectronics unveiled the latest MDmesh Dk5 power MOSFET tube with a fast recovery diode, high voltage (VHV) super-junction transistor that allows designers to maximize the energy efficiency of various power conversion topologies including zero voltage switch (ZVS) LLC Resonant Converter. ST introduces the new MDmesh MOSFET with a fast recovery diode to boost the power density of energy-efficient converters as super-junction MOSFETs. The new products are rated for 950V to 1050V switching performance, on-resistance (RDS (ON)), and silicon units Area of the rated current flowing through and other technical parameters are better than the planar structure