【摘 要】
：
The fabrication of ridge waveguide of 808 nm Ga As-based laser diodes by wet chemical etching is investigated. The etching behavior of Ga As, In Ga P and Al Ga
【机 构】
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State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sc
【出 处】
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Journal of Semiconductors
论文部分内容阅读
The fabrication of ridge waveguide of 808 nm Ga As-based laser diodes by wet chemical etching is investigated. The etching behavior of Ga As, In Ga P and Al Ga In P in various solutions is evaluated. As a result, the etching solutions simultaneously corroding In Ga P and Al Ga In P layers are searched successfully. Effects of etching time and the concentration of mixtures on etching depth and the geometrical shape of ridge are analyzed. It is found that under proper conditions, appropriate etching depth and smooth surfaces can be obtained and the steep degree of pattern can be accepted, especially for wide ridge waveguide laser diodes.
The fabrication of ridge waveguide of 808 nm Ga As-based laser diodes by wet chemical etching is investigated. The etching behavior of Ga As, In Ga P and Al Ga In P in various solutions is. Corroding In Ga P and Al Ga In P layers are searched successfully. Effects of etching time and the concentration of mixtures on etching depth and the geometrical shape of ridge are analyzed. It is found that under proper conditions, appropriate etching depth and smooth surfaces can be obtained and the steep degree of pattern can be accepted, especially for wide ridge waveguide laser diodes.
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