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目前,碲镉汞已被广泛用于制造热成象中采用的光子探测器。而在光子探测器的性能中,少子寿命是一个重要参数。在光电导器件中,探测率正比于τ(1/2)。而当光导器件工作在“扫出”方式时,要达到“扫出”而所件中,需的电场正比于τ(-1)。在扫积型(SPRITE)器等效背景限探测器数目正比于τ(1/2)。在光伏器件中,τ也是一个重要参数,因为它决定了扩散长度及少子收集效率。因此人们希望能够确定碲镉汞的寿命,从而有助于选取好的材料。所以我们开发了一种测量从原始晶锭上切下来的N型碲镉汞晶片的寿命分布技术。
Currently, HgCdTe has been widely used in the manufacture of photon detectors used in thermal imaging. In the photon detector performance, less son lifetime is an important parameter. In photoconductive devices, the detection rate is proportional to τ (1/2). When the photoconductive device is operating in the “sweep out” mode, it is necessary to reach “sweep out” and the required electric field is proportional to τ (-1). The number of detectors in the SPRITE equivalent background is proportional to τ (1/2). In photovoltaic devices, τ is also an important parameter because it determines the diffusion length and minority carrier collection efficiency. Therefore, people hope to determine the life expectancy of HgCdTe, which will help to select good materials. So we developed a technique to measure the lifetime distribution of N-type HgCdTe diced from the original ingot.