Pulsed metal organic chemical vapor deposition is introduced into the growth of In Ga N channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free In Ga N channel with smooth and abrupt interface. A very high two-dimensional electron gas density of approximately 1.85 × 1013cm-2is obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm2/V·s, owing to the suppression of interface roughness scattering. Furthermore, temperature-dependent Hall measurement results show that In Ga N channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties at elevated temperatures compared with the traditional Ga N channel heterostructure. The gratifying results imply that In Ga N channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices. Pulsed metal organic chemical vapor deposition is introduced into the growth of In Ga N channel heterostructure for improving material qualities and transport properties. High-resolution transmission electron microscopy imaging shows the phase separation free In Ga N channel with smooth and abrupt interface. A very high Two-dimensional electron gas density of approximately 1.85 × 1013 cm -2 was obtained due to the superior carrier confinement. In addition, the Hall mobility reaches 967 cm 2 / V · s, due to the suppression of interface roughness scattering. measurement results show that In Ga N channel heterostructure possesses a steady two-dimensional electron gas density over the tested temperature range, and has superior transport properties compared to the traditional Ga N channel heterostructure. The gratifying results imply that In Ga N channel heterostructure grown by pulsed metal organic chemical vapor deposition is a promising candidate for microwave power devices.