栅氧化物介质是MOS电路制作中的关键工艺之一。近年来大量地报告了有关在热生长栅氧化物介质时将氧或氧化物适量地添加到氧化气氛中去。证实了可以获得优质的栅氧化物介质,HCl氧化法就是其中方法之一。我们在鼓泡法基础上利用不同温度下HCl的PHCl值的不同,对HCl进行加热,实现了简便地控制优质栅氧化物介质的目的。大量实验证明这是切实可行的。 Gate oxide media is one of the key processes in MOS circuit fabrication. In recent years, a great deal of reports have been reported on the appropriate addition of oxygen or oxides to an oxidizing atmosphere during thermal growth of a gate oxide medium. Confirming that a good gate oxide medium can be obtained, one of the methods is the HCl oxidation method. Based on the bubbling method, we use different pH values ​​of HCl at different temperatures to heat HCl and achieve the purpose of simply controlling the high quality gate oxide. A large number of experiments show that this is feasible.