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研究了 Si衬底上 Si Ge C合金薄膜的生长。以 C2 H4 为 C源、采用快速加热超低压化学气相淀积 (RTP/VL P- CVD)的非平衡生长技术 ,在 Si(10 0 )衬底上生长出具有一定代位式 C含量的硅基 Si Ge C合金。实验表明 :较低的生长温度和较高的 Si H4 /C2 H4 流量比有利于代位式 C原子的形成和材料晶体质量的提高。
The growth of SiGe C alloy films on Si substrates was investigated. Using C2H4 as a C source, a non-equilibrium growth technique of rapid heating ultra-low pressure chemical vapor deposition (RTP / VL P-CVD) was used to grow a silicon group having a certain subscript C content on a Si (100) substrate Si Ge C alloy. Experiments show that the lower growth temperature and the higher Si H4 / C2 H4 flux ratio are favorable for the formation of substitutional C atoms and the improvement of crystal quality.