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圆片级封装再布线层结构改变焊盘布局从而提升器件I/O密度和集成度,在移动电子产品中得到广泛应用,其热机械可靠性备受关注。按照JEDEC标准对含RDL结构的WLP器件进行了温度循环试验,研究了WLP器件结构对可靠性的影响。结果表明,随样品节距减小,器件的可靠性降低;相同节距时,焊球直径越小可靠性越低。通过失效分析发现了3种与互连结构有关的失效模式,其中一种与RDL结构直接相关,且对大节距的WLP器件可靠性产生了较大影响。结合有限元模拟,对再布线结构圆片级封装的失效机理进行了深入地分析。
Wafer-level package re-wiring layer structure to change the pad layout to improve device I / O density and integration, widely used in mobile electronics, the thermal mechanical reliability of concern. According to the JEDEC standard temperature cycling test of WLP device with RDL structure, the effect of WLP device structure on reliability is studied. The results show that with the decrease of the sample pitch, the reliability of the device decreases. The smaller the diameter of the solder ball is, the lower the reliability is when the pitch is the same. Three failure modes related to the interconnect structure were found through failure analysis, one of which is directly related to the RDL structure and has a great impact on the reliability of the WLP device with a large pitch. Combined with the finite element simulation, the failure mechanism of wafer level package in rewiring structure is analyzed in depth.