本文报道了退火对非掺LEC SI GaAs晶片的电学性能和均匀性的影响。在850℃以上退火,晶片横截面上的平均迁移率由原生晶体的2.64×10~3cm~2/V·s提高到5.72×10`3cm~2/V·s,其中某些测量点达6.68×10~3cm~2/V·s,横向不均匀性由32％减少到6％,电阻率不均匀性由30％减少到10％。观察到晶片退火时间过长,性能反而下降。 基于上述实验结果,对退火改善晶体性能的机理进行了分析和讨论。 This paper reports the effect of annealing on the electrical properties and uniformity of non-doped LEC SI GaAs wafers. After annealing above 850 ℃, the average mobility in the cross section of the wafer increased from 2.64 × 10 ~ 3cm ~ 2 / V · s to 5.72 × 10 ~ 3cm ~ 2 / V · s, some of the measurement points reached 6.68 × 10 ~ 3cm ~ 2 / V · s, the lateral inhomogeneity decreased from 32% to 6%, and the resistivity nonuniformity decreased from 30% to 10%. It was observed that the annealing time of the wafer was too long, but the performance decreased. Based on the above experimental results, the mechanism of annealing to improve the crystal properties was analyzed and discussed.