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采用等离子体增强化学气相沉积法制备了不同硼掺杂比的P型a-Si:H系列薄膜。研究了硼掺杂比对P型a-Si:H薄膜微结构和光/电学性能的影响;同时,对最优掺杂比下的P型a-Si:H薄膜进行了真空退火处理,以研究薄膜晶体结构的改变对其光/电学性能的影响。结果表明:随着硼掺杂比的增加,P型a-Si:H薄膜的非晶结构没有实质改变,但其光学带隙及电学性能均有明显变化,总结出最佳硼掺杂比为1.0%。经真空退火处理后,P型a-Si:H薄膜的有序程度明显提高,光学带隙从1.81eV降低到1.72eV,电导率提高3个数量级。薄膜的晶体结构比硼掺杂量对薄膜电学性能的改善更为显著。
P-type a-Si: H thin films with different boron doping ratios were prepared by plasma enhanced chemical vapor deposition. The influence of boron doping ratio on the microstructure and optical / electrical properties of P-type a-Si: H thin films was studied. Meanwhile, the P-type a-Si: H thin films were annealed under vacuum at optimum doping ratio Effect of Altered Film Structure on Its Optical / Electrical Properties. The results show that the amorphous structure of P-type a-Si: H thin films does not change substantially with the increase of boron doping ratio, but the optical band gap and electrical properties of P-type a-Si: H thin films are obviously changed. 1.0%. After annealing in vacuum, the ordering degree of P-type a-Si: H thin film is obviously improved, the optical band gap is reduced from 1.81eV to 1.72eV, and the conductivity is increased by 3 orders of magnitude. The crystal structure of the film is more significant than the amount of boron doping on the improvement of the electrical properties of the film.