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在外延结构已经确定的前提下,如何在芯片前工艺COW制备中提高亮度成为各芯片厂商最关注的话题,而制备反射电极、增加电流阻挡层、优化图形、缩短线宽则是提高COW亮度的常用方法。本文主要探究尺寸为457um*889um的芯片在制备5um线宽时黄光作业中的最佳光刻条件,实验表明硬烤110°/60秒,曝光能量90mj/cm2,显影时间90秒,胶厚2.85um,软烤105℃/120秒为最佳光刻条件。
How to improve the brightness in the process of pre-chip COW fabrication has become a topic of most concern to chip makers under the precondition that the epitaxial structure has been determined. However, the preparation of reflective electrodes, increasing the current blocking layer, optimizing the pattern and shortening the line width increase the COW brightness Common methods. This paper mainly explores the best photolithography conditions for the yellowing operation of a chip with a size of 457um * 889um when preparing a 5um linewidth. The experiments show that a hard baking of 110 ° / 60s, an exposure energy of 90mj / cm2, a developing time of 90 seconds, 2.85um, soft baked 105 ℃ / 120 seconds for the best lithography conditions.