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随着高可靠电子技术的发展，要求硅双极器件的电流增益Ｈ_（ＦＥ）具有很低的正温度系数．发射区重掺杂引起的禁带变窄效应是常规硅双极晶体管Ｈ_（ＦＥ）具有较高正温度系数的主要原因．为了减小这一正温度系数，结合发射区轻掺杂技术，我们采用了新颖的多晶硅部分发射区、多晶硅发射区和非晶硅发射区等结构，获得了电性能优异的Ｈ_（ＦＥ）超低温度系数的硅双极器件，Ｈ_（ＦＥ）的１２５℃高温上升率和－５５℃低温下降率均小于２０％，有些甚至小于１０％．
With the development of highly reliable electronic technology, the current gain H FE of the silicon bipolar device is required to have a very low positive temperature coefficient. The narrow bandgap effect caused by heavy doping in the emitter region is the main reason for the higher positive temperature coefficient of the conventional silicon bipolar transistor H_ (FE). In order to reduce the positive temperature coefficient, combined with the light-emitting technology of the emitter region, we have adopted novel polysilicon emitter region, polysilicon emitter region and amorphous silicon emitter region to obtain the H_ (FE) ultra-low temperature Degree silicon bipolar devices, H_ (FE) 125 ℃ high temperature rise rate and -55 ℃ low temperature drop rate of less than 20%, and some even less than 10%.