摩托罗拉公司展示了全球第一个基于硅纳米晶体的4 Mb存储器件。这一全功能4Mb测试样片的出现,标志着半导体工业在开发浮栅式闪存的替代品道路上,实现了历史性的突破。研究人员相信,同浮栅式闪存相比,硅纳米晶体存储器体积能做得更小、稳定性更高,同时也更节能。硅纳米晶体存储器属于先进的“薄膜存储器”中的一种。摩托罗拉已经开发出相关技 Motorola presented the world’s first 4-megabit memory device based on silicon nanocrystals. The emergence of this full-featured 4Mb test sample marks a historic breakthrough for the semiconductor industry on the development of alternatives to floating-gate flash memory. Researchers believe the silicon nanocrystal memory can be made smaller, more stable and more energy-efficient than a floating-gate flash memory. Silicon nanocrystal memory belongs to one of the advanced “thin film memories”. Motorola has developed the relevant technology