通过化简复杂非线性的费米能级EF与二维电子气密度ns关系,并利用化简后函数的一阶泰勒多项式建立了线性化AlGaN/GaN HEMT中EF与ns关系的解析模型。该模型可以根据二维电子气密度ns的范围及温度计算EF与ns非线性关系之线性近似的参数斜率a和截距EF0。计算结果表明,所述模型的线性EF-ns计算结果对非线性精确解近似效果较好,且基于该模型计算的ns-VG曲线与实验数据符合良好。 The analytic model of the relationship between EF and ns in a linearized AlGaN / GaN HEMT is established by simplifying the relationship between the Fermi level EF of complex nonlinearities and the two-dimensional electron gas density ns and using the first-order Taylor polynomial of the reduced function. The model calculates the slope a of the parameter and the intercept EF0 of the linear approximation of the nonlinear relationship between EF and ns based on the range and temperature of two-dimensional electron gas density ns. The calculation results show that the linear EF-ns calculation results of the model are better than the nonlinear exact solution approximation, and the ns-VG curve calculated based on the model is in good agreement with the experimental data.