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采用甚高频等离子体增强化学气相沉积技术制备了不同衬底温度的微晶硅薄膜.利用傅里叶变换红外吸收对制备薄膜进行了结构方面的测试分析.结果表明:随衬底温度的升高,材料中的氢含量总的趋势下降;傅里叶变换红外吸收和二次离子质谱测试结果都显示薄膜中氧含量随衬底温度的升高而增加(在1019cm-3量级);与高衬底温度相比,低衬底温度制备的材料易于后氧化,这说明低温制备材料的稳定性不好.
The microcrystalline silicon thin films with different substrate temperature were prepared by the technique of very high frequency plasma enhanced chemical vapor deposition.The structures of the prepared films were analyzed by Fourier transform infrared absorption.The results show that with the increase of substrate temperature High, the overall trend of hydrogen content decreased; Fourier transform infrared absorption and secondary ion mass spectrometry test results show that the oxygen content of the film increases with substrate temperature (in the order of 1019cm-3); and Materials prepared at low substrate temperatures tend to post-oxidize compared to high substrate temperatures, indicating poor stability of the low-temperature prepared materials.