论文部分内容阅读
A new surface-potential-based model for AlGaN/AlN/GaN high electron mobility transistor(HEMT) is proposed in this paper. Since the high polarization effects caused by AlN interlayer favorably influence the two dimensional electron gas(2DEG) and scattering mechanisms, we first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN/AlN/GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN/AlN/GaN HEMT are faithfully reproduced by the new model.
A new surface-potential-based model for AlGaN / AlN / GaN high electron mobility transistor (HEMT) was proposed by this paper. We first add spontaneous and piezoelectric charge terms to the source equation of surface-potential, and a mobility model for AlGaN / AlN / GaN HEMT is rewritten. Compared with TCAD simulations, the DC characteristics of AlGaN / AlN / GaN HEMT are faithfully reproduced by the new model.