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报道了针对第三代碲镉汞红外焦平面的应用需求进行的碲镉汞分子束外延研究进展.面向大规模HgCdTe红外焦平面探测器的应用,开展了大面积替代衬底上的分子束外延技术研究,报道了在大面积替代衬底上的碲镉汞分子束外延材料的晶体质量、表面形貌和组份均匀性的改善方法和研究结果.512×512及以上规模的中波、短波碲镉汞面阵器件制备验证表明Si基碲镉汞材料满足应用需求.围绕甚长波红外焦平面探测器及雪崩红外焦平面探测器的研制需要,开展了低缺陷的ZnCdTe基碲镉汞分子束外延研究.外延获得的HgCdTe外延材料均匀性得到明显提高.经过外延条件的优化,厚度为10μm的HgCdTe/ZnCdTe(组分x=0.22)分子束外延材料位错密度最好结果为3×104 cm-2,双晶半峰宽小于25弧秒.
This paper reports the development of the HgCdTe molecular beam epitaxy for the application of the third generation HgCdTe infrared focal plane.For the application of the large-scale HgCdTe infrared focal plane detector, the molecular beam epitaxy Technical studies have reported on methods and results of improving the crystal quality, surface morphology and composition uniformity of HgCdTe molecular beam epitaxy materials on large-area alternative substrates. The medium-wave, short-wave The preparation of HgCdTe devices shows that the Si-based HgCdTe materials meet the application needs.Aiming at the needs of the development of very long wavelength infrared focal plane detectors and avalanche infrared focal plane detectors, a low defect ZnCdTe-based molecular beam of HgCdTe In epitaxial research, the homogeneity of HgCdTe epitaxial material obtained by epitaxial growth is obviously improved.According to the optimization of epitaxial conditions, the best result of dislocation density of HgCdTe / ZnCdTe (component x = 0.22) with a thickness of 10μm is 3 × 104 cm -2, half full width of twin crystal less than 25 arc seconds.