An ultra-low-dielectric-constant (ultra low-k, or ULK) porous SiOCH film is prepared using a single ring-type siloxane precursor of the 2,4,6,8-tetravinyl-2,4,6,8-tetramethylcyclotetrasiloxane by means of spin-on deposition, followed by crosslinking reactions between the precursor monomers under UV irradiation. The as-prepared film has an ultra low k of 2.41 at 1 MHz due to incorporation of pores and hydrocarbon crosslinkages, a leakage current density of 9.86*10-7 A/cm2 at 1 MV/cm, as well as a breakdown field strength of ~1.5 MV/cm. Further, annealing at 300°C results in lower k (i.e., 1.94 at 1 MHz), smaller leakage current density (2.96*10-7 A/cm2 at 1 MV/cm) and higher breakdown field strength (about 3.5 MV/cm), which are likely caused by the short-ranged structural rearrangement and reduction of defects in the film. Finally, the mechanical properties and surface morphology of films are also evaluated after different temperature annealing.