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采用磁控三靶(Si,Sb及Te)共溅射法制备了Si掺杂Sb2Te3薄膜,作为对比,制备了Ge2Sb2Te5和Sb2Te3薄膜,并且采用微加工工艺制备了单元尺寸为10μm×10μm的存储器件原型来研究器件性能.研究表明,Si掺杂提高了Sb2Te3薄膜的晶化温度以及薄膜的晶态和非晶态电阻率,使得其非晶态与晶态电阻率之比达到106,提高了器件的电阻开/关比;同Ge2Sb2Te5薄膜相比,16at%Si掺杂Sb2Te3薄膜具有较低的熔点和更高的晶态电阻率,这有利于降低器件的RESET电流.研究还表明,采用16at%Si掺杂Sb2Te3薄膜作为存储介质的存储器器件原型具有记忆开关特性,可以在脉高3V、脉宽500ns的电脉冲下实现SET操作,在脉高4V、脉宽20ns的电脉冲下实现RESET操作,并能实现反复写/擦,而采用Ge2Sb2Te5薄膜的相同结构的器件不能实现RESET操作.
Si-doped Sb2Te3 thin films were prepared by co-sputtering of magnetron targets (Si, Sb and Te). As a comparison, Ge2Sb2Te5 and Sb2Te3 thin films were prepared and memory devices with unit size of 10μm × 10μm were fabricated by micro- Prototype to study the performance of the device.Studies show that Si doping increases the crystallization temperature of Sb2Te3 thin film and crystalline and amorphous resistivity of the film, making the amorphous and crystalline resistivity ratio of 106, improve the device Compared with Ge2Sb2Te5 thin film, 16at% Si-doped Sb2Te3 thin film has a lower melting point and higher crystalline resistivity, which is conducive to reduce the RESET current device.Studies also show that the use of 16at% Si-doped Sb2Te3 thin film as a storage medium memory device prototype has a memory switch characteristics, can be in the pulse of 3V, pulse width of 500ns SET pulse operation to achieve the pulse width of 4V, 20ns pulse RESET operation, And can be repeated write / wipe, while using Ge2Sb2Te5 thin film of the same structure of the device can not RESET operation.