目前的半导体激光器多为二极管激光器,若将激光器制成具有和晶体管相同结构的晶体管激光器,则将会使光集成电路的制造变得较为方便.1990年9月份英刊《ElectronicsLetters》报道了首次提出的异质结场效应激光器(HJ—FET Laser),其结构如图所示.当栅-源(或漏)正向偏置,载流子注入GaAs有源层时,器件工作有如一个埋层异质结激光器.当栅处于反向偏置时,器件则如一个晶体管. Current semiconductor lasers are mostly diode lasers, and if the laser is made into a transistor laser having the same structure as the transistor, it will be more convenient to fabricate the optical integrated circuit .In September 1990, British edition “ElectronicsLetters” reported for the first time (HJ-FET Laser) with the structure shown in Figure 1. When the gate-source (or drain) is forward biased and carriers are injected into the GaAs active layer, the device operates as a buried layer Heterojunction lasers. When the gate is reverse biased, the device behaves like a transistor.